The BCR192WH6327XTSA1 is a surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a maximum power dissipation of 250mW and operates over a temperature range of -65°C to 150°C. The transistor is packaged in a SOT-323-3 package and is RoHS compliant.
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Infineon BCR192WH6327XTSA1 technical specifications.
| Package/Case | SOT-323-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector-emitter Voltage-Max | 300mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | -10V |
| Height | 0.8mm |
| Length | 2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| Width | 1.25mm |
| RoHS | Compliant |
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