PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V Collector-Emitter Breakdown Voltage (VCEO) and a maximum collector current of 70mA. Operates within a temperature range of -65°C to 150°C with a power dissipation of 200mW. Packaged in a RoHS compliant SOT-23-3 surface mount case with tin plating. Includes a minimum hFE of 50 and a transition frequency of 150MHz.
Infineon BCR196E6327HTSA1 technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 10V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Contact Plating | Tin |
| Current Rating | -70mA |
| Emitter Base Voltage (VEBO) | -10V |
| Halogen Free | Not Halogen Free |
| Height | 0.9mm |
| hFE Min | 50 |
| Input Resistance | 47kR |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 70mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| DC Rated Voltage | -50V |
| Width | 1.3mm |
| RoHS | Compliant |
No datasheet is available for this part.
