NPN silicon bipolar junction transistor for small signal applications. Features a 50V collector-emitter breakdown voltage and a 500mA maximum collector current. Operates with a 5V emitter-base voltage and 5V collector-base voltage. Surface mountable in an SC-74 package, this 6-pin transistor offers a transition frequency of 100MHz and a maximum power dissipation of 330mW. Rated for operation between -65°C and 150°C, it is RoHS compliant and lead-free.
PackageSC
Current Rating500mA
MountingSurface Mount
Power330mW
Quick Jump:
Technical Specifications
Infineon BCR523UE6327HTSA1 technical specifications.
General
Package/Case
SC
Collector Base Voltage (VCBO)
5V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
300mV
Collector-emitter Voltage-Max
300mV
Contact Plating
Tin, Matte
Current Rating
500mA
Emitter Base Voltage (VEBO)
5V
Halogen Free
Not Halogen Free
Height
0.95mm
Input Resistance
1kR
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
50V
Max Collector Current
500mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
330mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Power Dissipation
330mW
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
50V
Width
1.6mm
Compliance
RoHS
Compliant
Datasheet
Infineon BCR523UE6327HTSA1 Datasheet
Download the complete datasheet for Infineon BCR523UE6327HTSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
