NPN silicon bipolar junction transistor for small signal applications. Features a 50V collector-emitter breakdown voltage and a 500mA maximum collector current. Operates with a 5V emitter-base voltage and 5V collector-base voltage. Surface mountable in an SC-74 package, this 6-pin transistor offers a transition frequency of 100MHz and a maximum power dissipation of 330mW. Rated for operation between -65°C and 150°C, it is RoHS compliant and lead-free.
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Infineon BCR523UE6327HTSA1 technical specifications.
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 5V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector-emitter Voltage-Max | 300mV |
| Contact Plating | Tin, Matte |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Halogen Free | Not Halogen Free |
| Height | 0.95mm |
| Input Resistance | 1kR |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Power Dissipation | 330mW |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 50V |
| Width | 1.6mm |
| RoHS | Compliant |
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