The BCR583 is a PNP bipolar junction transistor with a collector-emitter voltage rating of 50V and a maximum collector current of 500mA. It features a collector-emitter saturation voltage of 300mV and is packaged in a small outline SOT package. The transistor is RoHS compliant and has a maximum power dissipation of 330mW. It can operate at temperatures up to 150°C and is available in tape and reel packaging.
PackageSOT
PolarityPNP
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Technical Specifications
Infineon BCR583 technical specifications.
General
| Package/Case | SOT |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Height | 0.9mm |
| hFE Min | 70 |
| Length | 2.9mm |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 330mW |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BCR583 Datasheet
Download the complete datasheet for Infineon BCR583 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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