
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 500mA and a collector-emitter breakdown voltage of 30V. Operates with a collector-base voltage of 40V and emitter-base voltage of 10V. This surface mount component is housed in a SOT-23 package and offers a transition frequency of 200MHz. Rated for a maximum power dissipation of 360mW, it operates across a temperature range of -65°C to 150°C and is RoHS compliant.
Sign in to ask questions about the Infineon BCV26E6327HTSA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon BCV26E6327HTSA1 technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 10V |
| Height | 0.9mm |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -30V |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon BCV26E6327HTSA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
