PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 500mA and a collector-emitter breakdown voltage of 30V. Operates with a collector-base voltage of 40V and emitter-base voltage of 10V. This surface mount component is housed in a SOT-23 package and offers a transition frequency of 200MHz. Rated for a maximum power dissipation of 360mW, it operates across a temperature range of -65°C to 150°C and is RoHS compliant.
PackageSOT-23
Current Rating-500mA
MountingSurface Mount
PolarityPNP
Quick Jump:
Technical Specifications
Infineon BCV26E6327HTSA1 technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 10V |
| Height | 0.9mm |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -30V |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BCV26E6327HTSA1 Datasheet
Download the complete datasheet for Infineon BCV26E6327HTSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
