NPN silicon bipolar junction transistor for small signal applications. Features a maximum collector current of 500mA and a collector-emitter breakdown voltage of 30V. Operates within a temperature range of -65°C to 150°C and offers a transition frequency of 170MHz. Packaged in a compact SOT-23 surface-mount case with tin, matte plating.
PackageSOT-23
Current Rating500mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Infineon BCV27E6327HTSA1 technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
1V
Contact Plating
Tin, Matte
Current Rating
500mA
Emitter Base Voltage (VEBO)
10V
Height
1mm
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
30V
Max Collector Current
500mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
360mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
170MHz
DC Rated Voltage
30V
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Infineon BCV27E6327HTSA1 Datasheet
Download the complete datasheet for Infineon BCV27E6327HTSA1 to view detailed technical specifications.
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