The BCV49E6327HTSA1 is a surface mount NPN bipolar junction transistor with a single dual collector configuration, packaged in a SOT-89 case. It has a maximum collector-emitter voltage of 60V and a maximum collector-base voltage of 80V. The transistor can handle a maximum continuous DC collector current of 0.5A and a maximum power dissipation of 1000mW. It operates over a temperature range of -65°C to 150°C.
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Infineon BCV49E6327HTSA1 technical specifications.
| Package/Case | SOT-89 |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 4.5 |
| Package Width (mm) | 2.5 |
| Package Height (mm) | 1.5 |
| Mounting | Surface Mount |
| Jedec | TO-243AA |
| Type | NPN |
| Configuration | Single Dual Collector |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 60V |
| Maximum Collector Base Voltage | 80V |
| Maximum Emitter Base Voltage | 10V |
| Maximum Continuous DC Collector Current | 0.5A |
| Maximum Power Dissipation | 1000mW |
| Maximum Base Emitter Saturation Voltage | [email protected]@100mAV |
| Maximum Collector-Emitter Saturation Voltage | [email protected]@100mAV |
| Minimum DC Current Gain | 10000@100mA@5V|2000@100uA@1V|2000@500mA@5V|4000@10mA@5V |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
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