PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 30V collector-emitter voltage and 0.1A maximum DC collector current. This dual common base configuration offers 2 elements per chip and a maximum power dissipation of 300mW. Housed in a 4-pin SOT-143 (TO-253AA) plastic package with gull-wing leads, it operates from -65°C to 150°C.
PackageSOT-143
MountingSurface Mount
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Technical Specifications
Infineon BCV62AE6327HTSA1 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT-143
Package/Case
SOT-143
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
4
PCB
4
Package Length (mm)
2.9
Package Width (mm)
1.3
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1
Pin Pitch (mm)
1.9|1.7
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-253AA
Type
PNP
Configuration
Dual Common Base
Number of Elements per Chip
2
Maximum Collector Base Voltage
30V
Maximum Emitter Base Voltage
6V
Maximum Collector-Emitter Voltage
30V
Maximum DC Collector Current
0.1A
Maximum Power Dissipation
300mW
Material
Si
Minimum DC Current Gain
[email protected]@5V|125@2mA@5V
Maximum Transition Frequency
250(Typ)MHz
Category
Bipolar Small Signal
Min Operating Temperature
-65°C
Max Operating Temperature
150°C
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon BCV62AE6327HTSA1 Datasheet
Download the complete datasheet for Infineon BCV62AE6327HTSA1 to view detailed technical specifications.
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