The BCW67A-E6327 is a PNP bipolar junction transistor with a collector-emitter voltage maximum of 32V and a current rating of 800mA. It has a gain bandwidth product of 200MHz and a minimum current gain of 35. The transistor is packaged in a SOT-23 package and is lead free. It operates over a temperature range of -65°C to 150°C and has a maximum power dissipation of 330mW.
PackageSOT-23
Current Rating-800mA
PolarityPNP
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Technical Specifications
Infineon BCW67A-E6327 technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 45V |
| Collector-emitter Voltage-Max | 32V |
| Current Rating | -800mA |
| Emitter Base Voltage (VEBO) | 2V |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 35 |
| Lead Free | Lead Free |
| Max Collector Current | 800mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 330mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| DC Rated Voltage | -32V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BCW67A-E6327 Datasheet
Download the complete datasheet for Infineon BCW67A-E6327 to view detailed technical specifications.
No datasheet is available for this part.