PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 32V collector-emitter breakdown voltage and 800mA continuous collector current. Operates up to 200MHz with a 700mV collector-emitter saturation voltage. Packaged in a SOT-23-3 surface mount case with tin matte plating. RoHS compliant and lead-free.
Frequency200MHz
PackageSOT-23-3
Current Rating-800mA
MountingSurface Mount
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Technical Specifications
Infineon BCW67CE6327HTSA1 technical specifications.
General
Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
45V
Collector Emitter Breakdown Voltage
32V
Collector Emitter Saturation Voltage
700uV
Collector Emitter Voltage (VCEO)
700mV
Collector-emitter Voltage-Max
700mV
Contact Plating
Tin, Matte
Continuous Collector Current
800mA
Current Rating
-800mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
2V
Frequency
200MHz
Halogen Free
Not Halogen Free
Height
0.9mm
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
32V
Max Collector Current
800mA
Max Frequency
200MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
330mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
330mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
200MHz
DC Rated Voltage
-32V
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Infineon BCW67CE6327HTSA1 Datasheet
Download the complete datasheet for Infineon BCW67CE6327HTSA1 to view detailed technical specifications.
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