PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 32V collector-emitter breakdown voltage and 800mA continuous collector current. Operates up to 200MHz with a 700mV collector-emitter saturation voltage. Packaged in a SOT-23-3 surface mount case with tin matte plating. RoHS compliant and lead-free.
Frequency200MHz
PackageSOT-23-3
Current Rating-800mA
MountingSurface Mount
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Technical Specifications
Infineon BCW67CE6327HTSA1 technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector Emitter Saturation Voltage | 700uV |
| Collector Emitter Voltage (VCEO) | 700mV |
| Collector-emitter Voltage-Max | 700mV |
| Contact Plating | Tin, Matte |
| Continuous Collector Current | 800mA |
| Current Rating | -800mA |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 2V |
| Frequency | 200MHz |
| Halogen Free | Not Halogen Free |
| Height | 0.9mm |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 32V |
| Max Collector Current | 800mA |
| Max Frequency | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 330mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -32V |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BCW67CE6327HTSA1 Datasheet
Download the complete datasheet for Infineon BCW67CE6327HTSA1 to view detailed technical specifications.
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