PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 45V collector-emitter voltage, 0.8A maximum collector current, and 330mW power dissipation. This single-element silicon transistor is housed in a 3-pin SOT-23 (TO-236AA) package with gull-wing leads, measuring 2.9mm x 1.3mm x 1mm. Operating temperature range is -65°C to 150°C, with a typical transition frequency of 200MHz.
PackageSOT-23
MountingSurface Mount
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Technical Specifications
Infineon BCW68FE6327HTSA1 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT-23 |
| Package/Case | SOT-23 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.3 |
| Package Height (mm) | 1(Max) |
| Seated Plane Height (mm) | 1 |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-236AA |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 60V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 45V |
| Maximum DC Collector Current | 0.8A |
| Maximum Power Dissipation | 330mW |
| Material | Si |
| Minimum DC Current Gain | 35@100uA@10V|75@10mA@1V|100@100mA@1V|35@500mA@2V |
| Maximum Transition Frequency | 200(Typ)MHz |
| Category | Bipolar Small Signal |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon BCW68FE6327HTSA1 Datasheet
Download the complete datasheet for Infineon BCW68FE6327HTSA1 to view detailed technical specifications.
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