PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 800mA and a collector-emitter breakdown voltage of 45V. Operates with a transition frequency of 200MHz and a maximum power dissipation of 330mW. Packaged in a SOT-23-3 surface mount case, this RoHS compliant component is designed for a wide operating temperature range from -65°C to 150°C.
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Infineon BCW68GE6327HTSA1 technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Voltage (VCEO) | 700mV |
| Collector-emitter Voltage-Max | 700mV |
| Contact Plating | Tin, Matte |
| Current Rating | -800mA |
| Emitter Base Voltage (VEBO) | 2V |
| Frequency | 200MHz |
| Halogen Free | Not Halogen Free |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 800mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 330mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -45V |
| RoHS | Compliant |
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