PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 800mA and a collector-emitter breakdown voltage of 45V. Operates with a transition frequency of 200MHz and a maximum power dissipation of 330mW. Packaged in a TO-236-3 surface mount case, this RoHS compliant component is supplied on tape and reel.
Frequency200MHz
PackageTO-236-3
MountingSurface Mount
PolarityPNP
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Technical Specifications
Infineon BCW68HE6327 technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 700mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 700mV |
| Emitter Base Voltage (VEBO) | 2V |
| Frequency | 200MHz |
| Height | 0.9mm |
| Length | 2.9mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 800mA |
| Max Frequency | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 330mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BCW68HE6327 Datasheet
Download the complete datasheet for Infineon BCW68HE6327 to view detailed technical specifications.
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