The BCX55-16E6327 is a NPN bipolar junction transistor with a maximum collector-emitter breakdown voltage of 60V and a maximum collector current of 1A. It has a gain bandwidth product of 100MHz and a maximum power dissipation of 2W. The transistor is packaged in a TO-243AA surface mount package and is suitable for operation over a temperature range of -65°C to 150°C. The device is RoHS compliant and available in quantities of 1000 per reel.
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Infineon BCX55-16E6327 technical specifications.
| Package/Case | TO-243AA |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 25 |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| RoHS | Compliant |
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