NPN silicon bipolar junction transistor for small signal applications. Features a 45V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 100mA. Operates with a transition frequency of 250MHz and a maximum power dissipation of 330mW. Packaged in a TO-236-3 surface mount case with tin, matte plating, suitable for tape and reel packaging.
Frequency250MHz
PackageTO-236-3
MountingSurface Mount
PolarityNPN
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Technical Specifications
Infineon BCX70GE6327HTSA1 technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 550mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 550mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 250MHz |
| Height | 0.9mm |
| Length | 2.9mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Frequency | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 330mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BCX70GE6327HTSA1 Datasheet
Download the complete datasheet for Infineon BCX70GE6327HTSA1 to view detailed technical specifications.
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