NPN silicon bipolar junction transistor for small signal applications. Features a 45V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 100mA. Operates with a transition frequency of 250MHz and a maximum power dissipation of 330mW. Packaged in a TO-236-3 surface mount case with tin, matte plating, suitable for tape and reel packaging.
Sign in to ask questions about the Infineon BCX70GE6327HTSA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon BCX70GE6327HTSA1 technical specifications.
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 550mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 550mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 250MHz |
| Height | 0.9mm |
| Length | 2.9mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Frequency | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 330mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon BCX70GE6327HTSA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
