The BDP947H6327XTSA1 is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 45V and a maximum collector current of 3A. It is packaged in a TO-261-4 surface mount package and has a maximum power dissipation of 5W. The transistor operates over a temperature range of -65°C to 150°C and is RoHS compliant.
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| Package/Case | TO-261-4 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Tin, Matte |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 5W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| RoHS | Compliant |
Download the complete datasheet for Infineon BDP947H6327XTSA1 to view detailed technical specifications.
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