Infineon
BDP947H6327XTSA1
Power Bipolar Transistor, 3A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, GREEN, PLASTIC PACKAGE-4
Power Bipolar Transistor, 3A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, GREEN, PLASTIC PACKAGE-4
PackageTO-261-4
MountingSurface Mount
PolarityNPN
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Technical Specifications
Infineon BDP947H6327XTSA1 technical specifications.
General
| Package/Case | TO-261-4 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Tin, Matte |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 5W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BDP947H6327XTSA1 Datasheet
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