PNP Bipolar Junction Transistor (BJT) for surface mount applications in a SOT-223-4 package. Features a maximum collector current of 3A and a collector-emitter breakdown voltage of 45V. Offers a maximum collector-emitter saturation voltage of 500mV and a DC rated voltage of -60V. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 5W. Transition frequency reaches 250MHz.
Frequency100MHz
PackageSOT-223-4
Current Rating-3A
MountingSurface Mount
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Technical Specifications
Infineon BDP950E6327 technical specifications.
General
| Package/Case | SOT-223-4 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector-emitter Voltage-Max | 650mV |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| Height | 1.6mm |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 3A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Series | BDP950 |
| Transition Frequency | 250MHz |
| DC Rated Voltage | -60V |
| Width | 3.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BDP950E6327 Datasheet
Download the complete datasheet for Infineon BDP950E6327 to view detailed technical specifications.
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