The BDP950H6327 is a surface mount PNP bipolar junction transistor with a collector-emitter breakdown voltage of 60V and a maximum collector current of 3A. It features a TO-261-4 package and is suitable for high-frequency applications with a transition frequency of 100MHz. The transistor has a maximum power dissipation of 5W and is available in a tape and reel packaging format with 1000 units per package.
PackageTO-261-4
MountingSurface Mount
PolarityPNP
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Technical Specifications
Infineon BDP950H6327 technical specifications.
General
| Package/Case | TO-261-4 |
| Collector Emitter Breakdown Voltage | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Max Collector Current | 3A |
| Max Power Dissipation | 5W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BDP950H6327 Datasheet
Download the complete datasheet for Infineon BDP950H6327 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.