RF Transistor, NPN silicon, single dual emitter configuration, designed for surface mount applications. Features a 15V maximum collector-emitter voltage and 0.15A maximum DC collector current. Operates with a minimum DC current gain of 80 at 8V/100mA, and a typical transition frequency of 6000MHz. Housed in a 4-pin SOT-223 (TO-261AA) plastic package with gull-wing leads, measuring 6.5mm x 3.5mm x 1.6mm. Suitable for automotive environments with an operating temperature range of -65°C to 150°C.
PackageSOT-223
MountingSurface Mount
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Technical Specifications
Infineon BFG135A technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT-223
Package/Case
SOT-223
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
4
PCB
3
Tab
Tab
Package Length (mm)
6.5
Package Width (mm)
3.5
Package Height (mm)
1.6
Seated Plane Height (mm)
1.8(Max)
Pin Pitch (mm)
2.3
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-261AA
Material
Si
Type
NPN
Configuration
Single Dual Emitter
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
15V
Maximum Collector Base Voltage
25V
Maximum Emitter Base Voltage
2V
Maximum DC Collector Current
0.15A
Maximum Power Dissipation
1000mW
Minimum DC Current Gain
80@100mA@8V
Minimum DC Current Gain Range
50 to 120
Maximum Transition Frequency
6000(Typ)MHz
Maximum Noise Figure
2.6(Typ)dB
Min Operating Temperature
-65°C
Max Operating Temperature
150°C
Maximum Power 1dB Compression
10.5(Typ)dBm
Operational Bias Conditions
8V/100mA
Typical Power Gain
14dB
Maximum 3rd Order Intercept Point
33(Typ)dBm
Compliance
Cage Code
CG091
EU RoHS
Yes
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon BFG135A Datasheet
Download the complete datasheet for Infineon BFG135A to view detailed technical specifications.
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