RF Transistor, NPN silicon, single dual emitter configuration, designed for surface mount applications. Features a 15V maximum collector-emitter voltage and 0.15A maximum DC collector current. Operates with a minimum DC current gain of 80 at 8V/100mA, and a typical transition frequency of 6000MHz. Housed in a 4-pin SOT-223 (TO-261AA) plastic package with gull-wing leads, measuring 6.5mm x 3.5mm x 1.6mm. Suitable for automotive environments with an operating temperature range of -65°C to 150°C.
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| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT-223 |
| Package/Case | SOT-223 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 3.5 |
| Package Height (mm) | 1.6 |
| Seated Plane Height (mm) | 1.8(Max) |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-261AA |
| Material | Si |
| Type | NPN |
| Configuration | Single Dual Emitter |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 15V |
| Maximum Collector Base Voltage | 25V |
| Maximum Emitter Base Voltage | 2V |
| Maximum DC Collector Current | 0.15A |
| Maximum Power Dissipation | 1000mW |
| Minimum DC Current Gain | 80@100mA@8V |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Transition Frequency | 6000(Typ)MHz |
| Maximum Noise Figure | 2.6(Typ)dB |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
| Maximum Power 1dB Compression | 10.5(Typ)dBm |
| Operational Bias Conditions | 8V/100mA |
| Typical Power Gain | 14dB |
| Maximum 3rd Order Intercept Point | 33(Typ)dBm |
| Cage Code | CG091 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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