NPN RF Bipolar Junction Transistor for surface mount applications. Features a 12V maximum collector-emitter voltage and 0.15A maximum DC collector current. This single dual emitter transistor is housed in a 4-pin SOT-223 (TO-261AA) plastic package with gull-wing leads. Offers a typical transition frequency of 7500 MHz and a typical noise figure of 2.3 dB, with a minimum DC current gain of 70 at 50mA and 8V. Operating temperature range is -65°C to 150°C.
PackageSOT-223
MountingSurface Mount
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Technical Specifications
Infineon BFG196 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT-223 |
| Package/Case | SOT-223 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 3.5 |
| Package Height (mm) | 1.6 |
| Seated Plane Height (mm) | 1.8(Max) |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-261AA |
| Material | Si |
| Type | NPN |
| Configuration | Single Dual Emitter |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 12V |
| Maximum Collector Base Voltage | 20V |
| Maximum Emitter Base Voltage | 2V |
| Maximum DC Collector Current | 0.15A |
| Maximum Power Dissipation | 800mW |
| Minimum DC Current Gain | 70@50mA@8V |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Transition Frequency | 7500(Typ)MHz |
| Maximum Noise Figure | 2.3(Typ)dB |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
| Operational Bias Conditions | 8V/50mA |
| Typical Power Gain | 14.5dB |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon BFG196 Datasheet
Download the complete datasheet for Infineon BFG196 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.