Automotive-grade NPN RF BJT transistor in a SOT-143-4 package. Features a 12V collector-emitter breakdown voltage and 20mA continuous collector current. Operates at frequencies up to 8GHz with a gain of 21dB. Maximum power dissipation is 175mW, with an operating temperature range of -65°C to 150°C. Surface mountable and supplied on tape and reel.
Frequency8GHz
PackageSOT-143-4
Current Rating20mA
MountingSurface Mount
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Technical Specifications
Infineon BFP181E7764HTSA1 technical specifications.
General
Package/Case
SOT-143-4
Collector Base Voltage (VCBO)
20V
Collector Emitter Breakdown Voltage
12V
Collector Emitter Voltage (VCEO)
12V
Collector-emitter Voltage-Max
12V
Continuous Collector Current
20mA
Current Rating
20mA
Emitter Base Voltage (VEBO)
2V
Frequency
8GHz
Gain
21dB
Gain Bandwidth Product
8GHz
Height
1mm
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
12V
Max Collector Current
20mA
Max Frequency
8GHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
175mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
175mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
8GHz
DC Rated Voltage
12V
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Infineon BFP181E7764HTSA1 Datasheet
Download the complete datasheet for Infineon BFP181E7764HTSA1 to view detailed technical specifications.
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