RF Small Signal Bipolar Transistor, NPN polarity, designed for L-Band applications with a maximum frequency of 8GHz and a transition frequency of 8GHz. Features a collector current of 0.035A and a gain of 22dB. This silicon transistor operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 250mW. Packaged in a SOT-143 surface mount configuration, it offers a collector-emitter breakdown voltage of 12V.
Frequency8GHz
PackageSOT-143
MountingSurface Mount
PolarityNPN
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Technical Specifications
Infineon BFP182RE7764HTSA1 technical specifications.
General
| Package/Case | SOT-143 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Voltage (VCEO) | 12V |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 2V |
| Frequency | 8GHz |
| Gain | 22dB |
| Height | 0.9mm |
| Length | 2.9mm |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 35mA |
| Max Frequency | 8GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 250mW |
| RoHS Compliant | Yes |
| Transition Frequency | 8GHz |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFP182RE7764HTSA1 Datasheet
Download the complete datasheet for Infineon BFP182RE7764HTSA1 to view detailed technical specifications.
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