Automotive-grade NPN RF Bipolar Junction Transistor (BJT) designed for surface-mount applications. Features a 12V maximum collector-emitter voltage and 65mA maximum DC collector current, with 250mW maximum power dissipation. This single, dual-emitter transistor offers a typical transition frequency of 8000MHz and a typical noise figure of 1.4dB. Housed in a 4-pin SOT-143 (TO-253AA) plastic package with gull-wing leads, it operates across a temperature range of -55°C to 150°C.
PackageSOT-143
MountingSurface Mount
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Technical Specifications
Infineon BFP183E7764HTSA1 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT-143
Package/Case
SOT-143
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
4
PCB
4
Package Length (mm)
2.9
Package Width (mm)
1.3
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1
Pin Pitch (mm)
1.9|1.7
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-253AA
Material
Si
Type
NPN
Configuration
Single Dual Emitter
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
12V
Maximum Collector Base Voltage
20V
Maximum Emitter Base Voltage
2V
Maximum DC Collector Current
0.065A
Maximum Power Dissipation
250mW
Minimum DC Current Gain
70@15mA@8V
Minimum DC Current Gain Range
50 to 120
Maximum Transition Frequency
8000(Typ)MHz
Maximum Noise Figure
1.4(Typ)dB
Typical Input Capacitance
1.1pF
Typical Output Capacitance
0.3pF
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Operational Bias Conditions
8V/15mA
Typical Power Gain
22dB
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541210075
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon BFP183E7764HTSA1 Datasheet
Download the complete datasheet for Infineon BFP183E7764HTSA1 to view detailed technical specifications.
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