
Automotive-grade NPN RF Bipolar Junction Transistor (BJT) designed for surface-mount applications. Features a 12V maximum collector-emitter voltage and 65mA maximum DC collector current, with 250mW maximum power dissipation. This single, dual-emitter transistor offers a typical transition frequency of 8000MHz and a typical noise figure of 1.4dB. Housed in a 4-pin SOT-143 (TO-253AA) plastic package with gull-wing leads, it operates across a temperature range of -55°C to 150°C.
Infineon BFP183E7764HTSA1 technical specifications.
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