RF Transistor, NPN, Single Dual Emitter, Silicon, 12V Collector-Emitter Voltage, 0.1A Collector Current, 700mW Power Dissipation. Features 7.5GHz transition frequency, 2.3dB noise figure, and 19dBm 1dB compression power. Housed in a 4-pin SOT-143 (TO-253AA) plastic surface-mount package with gull-wing leads. Operates from -65°C to 150°C.
PackageSOT-143
MountingSurface Mount
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Technical Specifications
Infineon BFP196 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-253-AA |
| Package/Case | SOT-143 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 4 |
| PCB | 4 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.3 |
| Package Height (mm) | 1(Max) |
| Seated Plane Height (mm) | 1 |
| Pin Pitch (mm) | 1.7|1.9 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-253AA |
| Material | Si |
| Type | NPN |
| Configuration | Single Dual Emitter |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 12V |
| Maximum Collector Base Voltage | 20V |
| Maximum Emitter Base Voltage | 2V |
| Maximum DC Collector Current | 0.1A |
| Maximum Power Dissipation | 700mW |
| Minimum DC Current Gain | 70@50mA@8V |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Transition Frequency | 7500(Typ)MHz |
| Maximum Noise Figure | 2.3(Typ)dB |
| Typical Input Capacitance | 0.35pF |
| Typical Output Capacitance | 0.83pF |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
| Maximum Power 1dB Compression | 19(Typ)dBm |
| Operational Bias Conditions | 8V/50mA |
| Typical Power Gain | 16.5dB |
| Maximum 3rd Order Intercept Point | 32(Typ)dBm |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon BFP196 Datasheet
Download the complete datasheet for Infineon BFP196 to view detailed technical specifications.
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