RF Transistor, NPN, Single Dual Emitter, Silicon, 12V Collector-Emitter Voltage, 0.1A Collector Current, 700mW Power Dissipation. Features 7.5GHz transition frequency, 2.3dB noise figure, and 19dBm 1dB compression power. Housed in a 4-pin SOT-143 (TO-253AA) plastic surface-mount package with gull-wing leads. Operates from -65°C to 150°C.
PackageSOT-143
MountingSurface Mount
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Technical Specifications
Infineon BFP196 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-253-AA
Package/Case
SOT-143
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
4
PCB
4
Package Length (mm)
2.9
Package Width (mm)
1.3
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1
Pin Pitch (mm)
1.7|1.9
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-253AA
Material
Si
Type
NPN
Configuration
Single Dual Emitter
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
12V
Maximum Collector Base Voltage
20V
Maximum Emitter Base Voltage
2V
Maximum DC Collector Current
0.1A
Maximum Power Dissipation
700mW
Minimum DC Current Gain
70@50mA@8V
Minimum DC Current Gain Range
50 to 120
Maximum Transition Frequency
7500(Typ)MHz
Maximum Noise Figure
2.3(Typ)dB
Typical Input Capacitance
0.35pF
Typical Output Capacitance
0.83pF
Min Operating Temperature
-65°C
Max Operating Temperature
150°C
Maximum Power 1dB Compression
19(Typ)dBm
Operational Bias Conditions
8V/50mA
Typical Power Gain
16.5dB
Maximum 3rd Order Intercept Point
32(Typ)dBm
Compliance
Cage Code
CG091
EU RoHS
Yes
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon BFP196 Datasheet
Download the complete datasheet for Infineon BFP196 to view detailed technical specifications.
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