RF Small Signal NPN Bipolar Transistor, designed for L-band applications. Features a maximum collector current of 40mA and a transition frequency of 25GHz. Offers a noise figure of 1.2dB and a power gain of 21.5dB. Packaged in a SOT-343 surface mount configuration, this RoHS compliant component operates within a temperature range of -55°C to 150°C.
Frequency25GHz
PackageSOT-343
MountingSurface Mount
PolarityNPN
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Technical Specifications
Infineon BFP410H6327XTSA1 technical specifications.
General
| Package/Case | SOT-343 |
| Collector Base Voltage (VCBO) | 13V |
| Collector Emitter Breakdown Voltage | 5V |
| Collector-emitter Voltage-Max | 4.5V |
| Contact Plating | Tin, Matte |
| Continuous Collector Current | 40mA |
| Emitter Base Voltage (VEBO) | 1.5V |
| Frequency | 25GHz |
| Gain | 21.5dB |
| Halogen Free | Halogen Free |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 5V |
| Max Collector Current | 40mA |
| Max Frequency | 25GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Noise Figure | 1.2dB |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| Power Gain | 21.5dB |
| RoHS Compliant | Yes |
| Transition Frequency | 25GHz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFP410H6327XTSA1 Datasheet
Download the complete datasheet for Infineon BFP410H6327XTSA1 to view detailed technical specifications.
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