The BFP640 is a NPN RF transistor with a collector-emitter breakdown voltage of 4V and a transition frequency of 40GHz. It is packaged in a small outline SOT package and is suitable for operation at temperatures up to 150°C. The transistor is RoHS compliant and halogen free. Its maximum power dissipation is 200mW.
PackageSOT
PolarityNPN
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Technical Specifications
Infineon BFP640 technical specifications.
General
| Package/Case | SOT |
| Collector Emitter Breakdown Voltage | 4V |
| Collector Emitter Voltage (VCEO) | 4V |
| Halogen Free | Halogen Free |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 200mW |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 40GHz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFP640 Datasheet
Download the complete datasheet for Infineon BFP640 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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