RF Transistor, NPN, single element, surface mount, SOT package. Features 41GHz frequency, 4.5V collector-emitter breakdown voltage, 4V collector-emitter voltage, and 150mA max collector current. Delivers 21.5dB power gain and a 0.8dB noise figure. Operates from -65°C to 150°C with 500mW power dissipation. RoHS and Halogen Free compliant.
Frequency41GHz
PackageSOT
MountingSurface Mount
PolarityNPN
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Technical Specifications
Infineon BFP650H6327XTSA1 technical specifications.
General
Package/Case
SOT
Collector Base Voltage (VCBO)
13V
Collector Emitter Breakdown Voltage
4.5V
Collector Emitter Voltage (VCEO)
4V
Contact Plating
Tin, Matte
Element Configuration
Single
Emitter Base Voltage (VEBO)
1.2V
Frequency
41GHz
Gain
21.5dB
Halogen Free
Halogen Free
Height
900um
Lead Free
Lead Free
Length
2mm
Max Breakdown Voltage
4.5V
Max Collector Current
150mA
Max Frequency
37GHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Mount
Surface Mount
Noise Figure
0.8dB
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
500mW
Power Gain
21.5dB
RoHS Compliant
Yes
Transition Frequency
37GHz
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Infineon BFP650H6327XTSA1 Datasheet
Download the complete datasheet for Infineon BFP650H6327XTSA1 to view detailed technical specifications.
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