
RF Transistor, NPN, single element, surface mount, SOT package. Features 41GHz frequency, 4.5V collector-emitter breakdown voltage, 4V collector-emitter voltage, and 150mA max collector current. Delivers 21.5dB power gain and a 0.8dB noise figure. Operates from -65°C to 150°C with 500mW power dissipation. RoHS and Halogen Free compliant.
Infineon BFP650H6327XTSA1 technical specifications.
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