
RF Transistor, NPN, single element, surface mount, SOT package. Features 41GHz frequency, 4.5V collector-emitter breakdown voltage, 4V collector-emitter voltage, and 150mA max collector current. Delivers 21.5dB power gain and a 0.8dB noise figure. Operates from -65°C to 150°C with 500mW power dissipation. RoHS and Halogen Free compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon BFP650H6327XTSA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | SOT |
| Collector Base Voltage (VCBO) | 13V |
| Collector Emitter Breakdown Voltage | 4.5V |
| Collector Emitter Voltage (VCEO) | 4V |
| Contact Plating | Tin, Matte |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 1.2V |
| Frequency | 41GHz |
| Gain | 21.5dB |
| Halogen Free | Halogen Free |
| Height | 900um |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 4.5V |
| Max Collector Current | 150mA |
| Max Frequency | 37GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Noise Figure | 0.8dB |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Power Gain | 21.5dB |
| RoHS Compliant | Yes |
| Transition Frequency | 37GHz |
| Width | 1.25mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon BFP650H6327XTSA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.