X-band RF small signal bipolar transistor, NPN polarity, featuring a 42GHz transition frequency and 27dB gain. This silicon germanium transistor operates with a maximum collector current of 30mA and a collector emitter voltage of 4V. Designed for surface mount applications in a SOT package, it offers a wide operating temperature range from -65°C to 150°C and a maximum power dissipation of 160mW. The component is RoHS compliant and halogen-free.
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Infineon BFP740H6327XTSA1 technical specifications.
| Package/Case | SOT |
| Collector Base Voltage (VCBO) | 13V |
| Collector Emitter Breakdown Voltage | 4.7V |
| Collector Emitter Voltage (VCEO) | 4V |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 1.2V |
| Frequency | 42GHz |
| Gain | 27dB |
| Halogen Free | Halogen Free |
| Height | 0.9mm |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 4.7V |
| Max Collector Current | 30mA |
| Max Frequency | 42GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 160mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 160mW |
| RoHS Compliant | Yes |
| Transition Frequency | 42GHz |
| Width | 1.25mm |
| RoHS | Compliant |
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