High-performance RF BJT transistor designed for demanding applications. Features a 2.25V collector-emitter voltage and 35mA continuous collector current. Operates at an impressive 85 GHz with a low noise figure of 0.55dB and power gain of 27.5dB. This NPN transistor offers a wide operating temperature range from -55°C to 150°C and is housed in a 4-pin TSFP surface-mount package, supplied on tape and reel. Compliant with RoHS and Halogen Free standards, with tin contact plating.
Frequency85 GHz
MountingSurface Mount
PolarityNPN
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Technical Specifications
Infineon BFP840FESDH6327XTSA1 technical specifications.
General
| Collector Base Voltage (VCBO) | 2.9V |
| Collector Emitter Breakdown Voltage | 2.6V |
| Collector Emitter Voltage (VCEO) | 2.25V |
| Collector-emitter Voltage-Max | 2.25V |
| Contact Plating | Tin |
| Continuous Collector Current | 35mA |
| Emitter Base Voltage (VEBO) | 2.6V |
| Gain | 35dB |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 2.6V |
| Max Collector Current | 35mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75mW |
| Mount | Surface Mount |
| Noise Figure | 0.55dB |
| Operating Frequency | 85 GHz |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Gain | 27.5dB |
| RoHS Compliant | Yes |
| Transition Frequency | 85GHz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFP840FESDH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BFP840FESDH6327XTSA1 to view detailed technical specifications.
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