
RF Transistor, NPN, SOT-323 package, featuring a 12V collector-emitter breakdown voltage and 20mA max collector current. This surface mount device operates with a 20V collector-base voltage and 2V emitter-base voltage. It offers an 8GHz transition frequency and 19dB power gain at 900MHz, with a noise figure of 0.9dB. Rated for 175mW power dissipation, it operates from -65°C to 150°C and is RoHS compliant.
Infineon BFR181WH6327XTSA1 technical specifications.
| Package/Case | SOT |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Voltage (VCEO) | 12V |
| Emitter Base Voltage (VEBO) | 2V |
| Frequency | 8GHz |
| Gain | 19dB |
| Halogen Free | Halogen Free |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 20mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 175mW |
| Mount | Surface Mount |
| Noise Figure | 0.9dB |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 175mW |
| Power Gain | 19dB |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Test Frequency | 900MHz |
| Transition Frequency | 8GHz |
| RoHS | Compliant |
Download the complete datasheet for Infineon BFR181WH6327XTSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
