NPN RF Bipolar Junction Transistor for high-frequency applications. Features a 12V collector-emitter breakdown voltage and a maximum collector current of 35mA. Operates up to 8GHz with a power gain of 19dB at 900MHz and a low noise figure of 0.9dB. Housed in a 3-pin SOT-323 surface-mount package, this RoHS and Halogen Free component offers a maximum power dissipation of 250mW and an operating temperature range of -65°C to 150°C.
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Infineon BFR182WH6327XTSA1 technical specifications.
| Package/Case | SOT |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Voltage (VCEO) | 12V |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 2V |
| Frequency | 8GHz |
| Gain | 19dB |
| Halogen Free | Halogen Free |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 35mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Noise Figure | 0.9dB |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 250mW |
| Power Gain | 19dB |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Test Frequency | 900MHz |
| Transition Frequency | 8GHz |
| RoHS | Compliant |
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