NPN RF Bipolar Junction Transistor (BJT) designed for high-frequency applications. Features a maximum collector-emitter voltage of 12V and a maximum DC collector current of 0.08A. Offers a typical transition frequency of 8000MHz and a typical noise figure of 1.6dB. Packaged in a 3-pin SOT-23 (TO-236AA) surface-mount plastic housing with gull-wing leads. Operates within a temperature range of -55°C to 150°C.
PackageSOT-23
MountingSurface Mount
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Technical Specifications
Infineon BFR193E6327HTSA1 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT-23
Package/Case
SOT-23
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.3
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1
Pin Pitch (mm)
0.95
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-236AA
Material
Si
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
12V
Maximum Collector Base Voltage
20V
Maximum Emitter Base Voltage
2V
Maximum DC Collector Current
0.08A
Maximum Power Dissipation
580mW
Minimum DC Current Gain
70@30mA@8V
Minimum DC Current Gain Range
50 to 120
Maximum Transition Frequency
8000(Typ)MHz
Maximum Noise Figure
1.6(Typ)dB
Typical Input Capacitance
2.25pF
Typical Output Capacitance
0.66pF
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Operational Bias Conditions
8V/30mA
Typical Power Gain
15dB
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541210075
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon BFR193E6327HTSA1 Datasheet
Download the complete datasheet for Infineon BFR193E6327HTSA1 to view detailed technical specifications.
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