RF NPN Bipolar Junction Transistor for surface mount applications. Features a maximum collector current of 80mA and a maximum operating frequency of 8GHz, with a power gain of 19dB and a noise figure of 1dB. This device offers a collector-emitter breakdown voltage of 12V and operates within a temperature range of -55°C to 150°C. Packaged in a compact 1.2mm x 0.8mm x 0.55mm TSFP (SOT-723) case, it is supplied on tape and reel.
Frequency8GHz
PackageSOT-723
MountingSurface Mount
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Technical Specifications
Infineon BFR193FH6327XTSA1 technical specifications.
General
| Package/Case | SOT-723 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 12V |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 2V |
| Gain | 12.5dB |
| Halogen Free | Halogen Free |
| Height | 0.55mm |
| Lead Free | Lead Free |
| Length | 1.2mm |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 80mA |
| Max Frequency | 8GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 580mW |
| Mount | Surface Mount |
| Noise Figure | 1dB |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Power Gain | 19dB |
| RoHS Compliant | Yes |
| Transition Frequency | 8GHz |
| Width | 0.8mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFR193FH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BFR193FH6327XTSA1 to view detailed technical specifications.
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