The BFR193WH6327XTSA1 is a surface mount NPN RF transistor with a maximum collector current of 80mA and a maximum power dissipation of 580mW. It has a maximum operating temperature range of -55°C to 150°C and is compliant with RoHS regulations. The transistor has a transition frequency of 8GHz and a gain of 16dB. It is packaged in a SOT-323 package and is available on tape and reel.
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Infineon BFR193WH6327XTSA1 technical specifications.
| Package/Case | SOT |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Voltage (VCEO) | 12V |
| Emitter Base Voltage (VEBO) | 2V |
| Frequency | 8GHz |
| Gain | 16dB |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 80mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 580mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 580mW |
| RoHS Compliant | Yes |
| Transition Frequency | 8GHz |
| RoHS | Compliant |
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