Infineon
BFR720L3RHE6327XTSA1
NPN Bipolar Junction Transistor, 20mA, 80mW, 45GHz, -65°C to 150°C, Surface Mount
The BFR720L3RHE6327XTSA1 is a NPN bipolar junction transistor with a maximum collector current of 20mA and a maximum power dissipation of 80mW. It has a transition frequency of 45GHz and operates over a temperature range of -65°C to 150°C. This transistor is designed for surface mount applications and is packaged in tape and reel.
MountingSurface Mount
Quick Jump:
Technical Specifications
Infineon BFR720L3RHE6327XTSA1 technical specifications.
General
| Collector Base Voltage (VCBO) | 13V |
| Collector Emitter Breakdown Voltage | 4.7V |
| Gain | 24dB |
| Max Breakdown Voltage | 4.7V |
| Max Collector Current | 20mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 80mW |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Transition Frequency | 45GHz |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Infineon BFR720L3RHE6327XTSA1 Datasheet
Download the complete datasheet for Infineon BFR720L3RHE6327XTSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.