X-band RF small signal bipolar transistor featuring NPN silicon germanium technology. This 1-element, surface-mount device offers a transition frequency of 42GHz and a power gain of 24.5dB. Key electrical specifications include a maximum collector current of 30mA, a collector-emitter voltage (VCEO) of 4V, and a collector-base voltage (VCBO) of 13V. Operating across a temperature range of -55°C to 150°C, this HALOGEN FREE and ROHS COMPLIANT transistor is supplied in a leadless TSLP-3-9 package.
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Infineon BFR740L3RHE6327XTSA1 technical specifications.
| Collector Base Voltage (VCBO) | 13V |
| Collector Emitter Breakdown Voltage | 4.7V |
| Collector Emitter Voltage (VCEO) | 4V |
| Contact Plating | Gold |
| Current Rating | 30mA |
| Emitter Base Voltage (VEBO) | 1.2V |
| Frequency | 42GHz |
| Gain | 24.5dB |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 4.7V |
| Max Collector Current | 30mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160mW |
| Mount | Surface Mount |
| Noise Figure | 0.5dB |
| Number of Elements | 1 |
| Package Quantity | 15000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 160mW |
| Power Gain | 24.5dB |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 42GHz |
| DC Rated Voltage | 4V |
| RoHS | Compliant |
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