NPN RF Bipolar Junction Transistor (BJT) designed for high-frequency applications. Features a maximum collector-emitter voltage of 12V and a maximum collector current of 0.09A. Offers a maximum power dissipation of 300mW and a typical transition frequency of 6000MHz. Packaged in a 3-pin SOT-23 (TO-236AA) surface-mount plastic package with gull-wing leads. Operates across a temperature range of -55°C to 150°C.
PackageSOT-23
MountingSurface Mount
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Technical Specifications
Infineon BFR93AE6327HTSA1 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
SOT-23
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.3
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1
Pin Pitch (mm)
0.95
Package Material
Plastic
Mounting
Surface Mount
Package Orientation
Yes
Package Orientation Marking Type
Beveled Edge
Jedec
TO-236AA
Material
Si
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
12V
Maximum Collector Base Voltage
20V
Maximum Emitter Base Voltage
2V
Maximum DC Collector Current
0.09A
Maximum Power Dissipation
300mW
Minimum DC Current Gain
70@30mA@8V
Minimum DC Current Gain Range
50 to 120
Maximum Transition Frequency
6000(Typ)MHz
Maximum Noise Figure
2.6(Typ)dB
Typical Input Capacitance
1.9pF
Typical Output Capacitance
0.54pF
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Maximum Power 1dB Compression
6(Typ)dBm
Operational Bias Conditions
8V/30mA
Typical Power Gain
14.5dB
Maximum 3rd Order Intercept Point
15(Typ)dBm
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541210075
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon BFR93AE6327HTSA1 Datasheet
Download the complete datasheet for Infineon BFR93AE6327HTSA1 to view detailed technical specifications.
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