NPN RF BJT transistor, single element, silicon material. Features 15V collector-emitter voltage, 25V collector-base voltage, and 2.5V emitter-base voltage. Offers 0.025A maximum DC collector current and 280mW maximum power dissipation. Minimum DC current gain is 20 at 2mA/1V and 25mA/1V, with a range of 2 to 30. Maximum transition frequency is 2.5MHz, noise figure is 5dB, and 1dB compression power is 10dBm. Operates with 5V/20mA bias, providing 13dB typical power gain. Packaged in a 3-pin SOT-23.
PackageSOT-23
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Technical Specifications
Infineon BFS 17P E6327 technical specifications.
General
| Material | Si |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 15V |
| Maximum Collector Base Voltage | 25V |
| Maximum Emitter Base Voltage | 2.5V |
| Maximum DC Collector Current | 0.025A |
| Maximum Power Dissipation | 280mW |
| Minimum DC Current Gain | 20@2mA@1V|20@25mA@1V |
| Minimum DC Current Gain Range | 2 to 30 |
| Maximum Collector-Emitter Saturation Voltage | 0.4@1mA@10mAV |
| Maximum Transition Frequency | 2.5(Typ)MHz |
| Maximum Noise Figure | 5dB |
| Typical Input Capacitance | 0.9pF |
| Typical Output Capacitance | 0.55pF |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
| Maximum Power 1dB Compression | 10(Typ)dBm |
| Operational Bias Conditions | 5V/20mA |
| Typical Power Gain | 13dB |
| Maximum 3rd Order Intercept Point | 21.5(Typ)dBm |
| Pin Count | 3 |
| Package/Case | SOT-23 |
| Package Family Name | SOT-23 |
Compliance
| RoHS | Yes |
| RoHS Version | 2011/65/EU, 2015/863 |
Datasheet
Infineon BFS 17P E6327 Datasheet
Download the complete datasheet for Infineon BFS 17P E6327 to view detailed technical specifications.
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