Ultra High Frequency RF Small Signal Field-Effect Transistor, featuring two N-Channel Silicon Metal-oxide Semiconductor FET elements. Operates in the 800MHz band with a gain of 24dB and a low noise figure of 1.3dB. Offers a continuous drain current of 25mA, drain-to-source breakdown voltage of 12V, and gate-to-source voltage of 6V. Packaged in a compact SOT-363 surface mount case with tin contact plating, this RoHS compliant component is supplied on tape and reel.
Frequency800MHz
PackageSOT-363
Voltage Rating8V
Current Rating25mA
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Technical Specifications
Infineon BG3130H6327XTSA1 technical specifications.
General
Package/Case
SOT-363
Contact Plating
Tin
Continuous Drain Current (ID)
25mA
Current Rating
25mA
Drain to Source Breakdown Voltage
12V
Drain to Source Voltage (Vdss)
12V
Frequency
800MHz
Gain
24dB
Gate to Source Voltage (Vgs)
6V
Height
0.8mm
Input Capacitance
1.9pF
Length
2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Noise Figure
1.3dB
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
200mW
RoHS Compliant
Yes
Test Voltage
5V
Voltage Rating
8V
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Infineon BG3130H6327XTSA1 Datasheet
Download the complete datasheet for Infineon BG3130H6327XTSA1 to view detailed technical specifications.
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