INFINEON

BG3130H6327XTSA1

Datasheet

RF FET, N-Ch, 800MHz, 12V, 25mA, 24dB, SOT-363

Infineon

BG3130H6327XTSA1

Name: BG3130H6327XTSA1 Infineon
Brand: Infineon
SKU: BG3130H6327XTSA1

RF FET, N-Ch, 800MHz, 12V, 25mA, 24dB, SOT-363

Ultra High Frequency RF Small Signal Field-Effect Transistor, featuring two N-Channel Silicon Metal-oxide Semiconductor FET elements. Operates in the 800MHz band with a gain of 24dB and a low noise figure of 1.3dB. Offers a continuous drain current of 25mA, drain-to-source breakdown voltage of 12V, and gate-to-source voltage of 6V. Packaged in a compact SOT-363 surface mount case with tin contact plating, this RoHS compliant component is supplied on tape and reel.

Frequency800MHz

PackageSOT-363

Voltage Rating8V

Current Rating25mA

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Technical Specifications

Infineon BG3130H6327XTSA1 technical specifications.

General

Package/Case	SOT-363
Contact Plating	Tin
Continuous Drain Current (ID)	25mA
Current Rating	25mA
Drain to Source Breakdown Voltage	12V
Drain to Source Voltage (Vdss)	12V
Frequency	800MHz
Gain	24dB
Gate to Source Voltage (Vgs)	6V
Height	0.8mm
Input Capacitance	1.9pF
Length	2mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	200mW
Mount	Surface Mount
Noise Figure	1.3dB
Number of Elements	2
Package Quantity	3000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	200mW
RoHS Compliant	Yes
Test Voltage	5V
Voltage Rating	8V
Width	1.25mm