The BG5130RE6327 is an N-channel FET from Infineon with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 25mA and a maximum power dissipation of 200mW. The device is packaged in a lead-free SOT-363-6 package and is suitable for high-frequency applications up to 800MHz.
Frequency800MHz
PackageSOT-363-6
Voltage Rating8V
Current Rating25mA
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Technical Specifications
Infineon BG5130RE6327 technical specifications.
General
| Package/Case | SOT-363-6 |
| Continuous Drain Current (ID) | 25mA |
| Current Rating | 25mA |
| Drain to Source Breakdown Voltage | 8V |
| Drain to Source Voltage (Vdss) | 8V |
| Frequency | 800MHz |
| Gain | 24dB |
| Gate to Source Voltage (Vgs) | 6V |
| Input Capacitance | 2.7pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Noise Figure | 1.3dB |
| Package Quantity | 6000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 200mW |
| Test Voltage | 3V |
| Voltage Rating | 8V |
| DC Rated Voltage | 8V |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon BG5130RE6327 Datasheet
Download the complete datasheet for Infineon BG5130RE6327 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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