Infineon
BSB008NE2LX
Power Field-Effect Transistor, 46A I(D), 25V, 0.0008ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN
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Technical Specifications
Infineon BSB008NE2LX technical specifications.
General
| Continuous Drain Current (ID) | 46A |
| Fall Time | 32.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Packaging | Tape and Reel |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 12.6ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSB008NE2LX Datasheet
Download the complete datasheet for Infineon BSB008NE2LX to view detailed technical specifications.
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