Infineon
BSB008NE2LXXUMA1
Power Field-Effect Transistor, 46A I(D), 25V, 0.0008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN
Power Field-Effect Transistor, 46A I(D), 25V, 0.0008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN
MountingSurface Mount
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Technical Specifications
Infineon BSB008NE2LXXUMA1 technical specifications.
General
| Continuous Drain Current (ID) | 180A |
| Drain to Source Voltage (Vdss) | 25V |
| Halogen Free | Halogen Free |
| Input Capacitance | 16nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 25V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 0.8mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSB008NE2LXXUMA1 Datasheet
Download the complete datasheet for Infineon BSB008NE2LXXUMA1 to view detailed technical specifications.
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