The BSB013NE2LXIXUMA1 is a high-power MOSFET from Infineon with a maximum operating temperature of 150°C and a minimum operating temperature of -40°C. It features a continuous drain current of 163A and a drain to source voltage of 25V. The device has a maximum power dissipation of 2.8W and an on-state resistance of 1.3mR. It is packaged in a CHIP CARRIER, R-MBCC-N3 and is compliant with RoHS regulations.
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Technical Specifications
Infineon BSB013NE2LXIXUMA1 technical specifications.
General
| Contact Plating | Silver |
| Continuous Drain Current (ID) | 163A |
| Drain to Source Resistance | 1.1mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 4.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 4.4nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8W |
| On-State Resistance | 1.3mR |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 1.3mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 5.4ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSB013NE2LXIXUMA1 Datasheet
Download the complete datasheet for Infineon BSB013NE2LXIXUMA1 to view detailed technical specifications.
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