N-Channel Power MOSFET, 80V Vdss, 90A continuous drain current, and 4.4mR Rds On. This silicon Metal-oxide Semiconductor FET features a 2.8V threshold voltage and 5.7nF input capacitance. Designed for surface mounting, it operates within a temperature range of -40°C to 150°C with a maximum power dissipation of 78W. RoHS compliant with silver contact plating.
MountingSurface Mount
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Technical Specifications
Infineon BSB044N08NN3GXUMA1 technical specifications.
General
| Contact Plating | Silver |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Voltage (Vdss) | 80V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 5.7nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 80V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 78W |
| Mount | Surface Mount |
| Rds On Max | 4.4mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 2.8V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSB044N08NN3GXUMA1 Datasheet
Download the complete datasheet for Infineon BSB044N08NN3GXUMA1 to view detailed technical specifications.
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