N-Channel Power MOSFET, 100V Vdss, 9A Continuous Drain Current (ID), and 5.6mR Rds On. Features include 150°C max operating temperature, 78W max power dissipation, and surface mount capability. This silicon, metal-oxide semiconductor FET offers lead-free and halogen-free construction, with silver contact plating. Supplied in tape and reel packaging.
MountingSurface Mount
Power2.8W
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Technical Specifications
Infineon BSB056N10NN3GXUMA1 technical specifications.
General
| Contact Plating | Silver |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Resistance | 5mR |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 5.5nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 78W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 5.6mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.8W |
| Radiation Hardening | No |
| Rds On Max | 5.6mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSB056N10NN3GXUMA1 Datasheet
Download the complete datasheet for Infineon BSB056N10NN3GXUMA1 to view detailed technical specifications.
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