N-Channel Power MOSFET, 41A continuous drain current and 25V drain-source voltage. Features a low on-resistance of 0.00125 ohms. This single-element silicon device utilizes a metal-oxide semiconductor field-effect transistor structure. Packaged in an SOP-8, it offers 5 terminals with a dual terminal position.
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Technical Specifications
Infineon BSC009NE2LS5ATMA1 technical specifications.
General
| Number of Terminals | 5 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon BSC009NE2LS5ATMA1 Datasheet
Download the complete datasheet for Infineon BSC009NE2LS5ATMA1 to view detailed technical specifications.
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