N-Channel Power MOSFET, 25V Vds, 100A continuous drain current, and 0.75mΩ Rds(on). Features include a 150°C maximum operating temperature, 96W power dissipation, and 5.8nF input capacitance. This surface-mount device is packaged in TDSON-8 and supplied on tape and reel. It offers a 19ns fall time and 48ns turn-off delay time.
Sign in to ask questions about the Infineon BSC009NE2LSATMA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon BSC009NE2LSATMA1 technical specifications.
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 0.75mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1mm |
| Input Capacitance | 5.8nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 25V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 96W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 96W |
| Rds On Max | 0.9mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 48ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSC009NE2LSATMA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
