N-Channel Power MOSFET, 25V Vds, 100A continuous drain current, and 0.75mΩ Rds(on). Features include a 150°C maximum operating temperature, 96W power dissipation, and 5.8nF input capacitance. This surface-mount device is packaged in TDSON-8 and supplied on tape and reel. It offers a 19ns fall time and 48ns turn-off delay time.
MountingSurface Mount
PolarityN-CHANNEL
Power96W
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Technical Specifications
Infineon BSC009NE2LSATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 0.75mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1mm |
| Input Capacitance | 5.8nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 25V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 96W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 96W |
| Rds On Max | 0.9mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 48ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC009NE2LSATMA1 Datasheet
Download the complete datasheet for Infineon BSC009NE2LSATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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