N-Channel Power MOSFET, 40V Drain-to-Source Voltage (Vdss) and 100A Continuous Drain Current (ID). Features low 1mR Rds On Max and 139W Max Power Dissipation. Operates from -55°C to 150°C with a 2V Threshold Voltage. This silicon, metal-oxide semiconductor FET is surface mountable in TDSON-8 packaging, supplied on tape and reel, and is RoHS compliant.
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Infineon BSC010N04LSATMA1 technical specifications.
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.8nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 139W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 1mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 46ns |
| Turn-On Delay Time | 10ns |
| RoHS | Compliant |
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