Power Field-Effect Transistor, 37A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8, 8 PIN
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Infineon BSC010N04LSIATMA1 technical specifications.
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.2nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 139W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Rds On Max | 1.05mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSC010N04LSIATMA1 to view detailed technical specifications.
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