Infineon
BSC010NE2LSI
Power Field-Effect Transistor, 38A I(D), 25V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Technical Specifications
Infineon BSC010NE2LSI technical specifications.
General
Continuous Drain Current (ID)
100A
Drain to Source Voltage (Vdss)
25V
Fall Time
4.6ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Input Capacitance
4.2nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
96W
Package Quantity
1
Packaging
Tape and Reel
Rds On Max
1.05mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
32ns
Turn-On Delay Time
6.3ns
Compliance
RoHS
Compliant
Datasheet
Infineon BSC010NE2LSI Datasheet
Download the complete datasheet for Infineon BSC010NE2LSI to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.