Infineon
BSC010NE2LSI
Power Field-Effect Transistor, 38A I(D), 25V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Technical Specifications
Infineon BSC010NE2LSI technical specifications.
General
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 4.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 4.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 96W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 1.05mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 6.3ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC010NE2LSI Datasheet
Download the complete datasheet for Infineon BSC010NE2LSI to view detailed technical specifications.
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